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頻率：125MHZ
尺寸：7.00mmx5.00mm
美國Silicon晶振 531BC125M000DG 6G以太網(wǎng)晶振 Si531差分振蕩器，尺寸為7.00mmx5.00mm，頻率125MHZ，輸出邏輯LVDS，XO時(shí)鐘振蕩器（標(biāo)準(zhǔn)），電壓為3.3V，腳位6-SMD，LVDS輸出晶振，美國進(jìn)口晶振，差分晶體振蕩器，石英晶體振蕩器，有源貼片晶振，超聲波差分晶振，網(wǎng)絡(luò)專用差分晶振，測(cè)試測(cè)量專用差分晶振，低功耗差分晶振，低抖動(dòng)差分晶振，具有低抖動(dòng)低電壓的特點(diǎn)，很適合用于超聲波，SDH，網(wǎng)絡(luò)，SD/HD視頻，測(cè)試和測(cè)量，時(shí)鐘和數(shù)據(jù)恢復(fù)，F(xiàn)PGA/ASIC時(shí)鐘生成等領(lǐng)域.
Si530/531 XO利用天空解決方案的先進(jìn)DSPLL®電路提供一個(gè)高頻低抖動(dòng)時(shí)鐘。Si530/531 OSC晶振可提供從10到945MHz的任意速率輸出頻率，并選擇頻率到1400MHz。與傳統(tǒng)的XO不同，每個(gè)輸出頻率都需要一個(gè)不同的晶體，而Si530/531使用一個(gè)固定的晶體來提供一個(gè)大范圍的輸出頻率。這種基于集成電路的方法允許晶體諧振器提供特殊的頻率穩(wěn)定性和可靠性。美國Silicon晶振 531BC125M000DG 6G以太網(wǎng)晶振 Si531差分振蕩器.
美國Silicon晶振 531BC125M000DG 6G以太網(wǎng)晶振 Si531差分振蕩器，尺寸為7.00mmx5.00mm，頻率125MHZ，輸出邏輯LVDS，XO時(shí)鐘振蕩器（標(biāo)準(zhǔn)），電壓為3.3V，腳位6-SMD，LVDS輸出晶振，美國進(jìn)口晶振，差分晶體振蕩器，石英晶體振蕩器，有源貼片晶振，超聲波差分晶振，網(wǎng)絡(luò)專用差分晶振，測(cè)試測(cè)量專用差分晶振，低功耗差分晶振，低抖動(dòng)差分晶振，具有低抖動(dòng)低電壓的特點(diǎn)，很適合用于超聲波，SDH，網(wǎng)絡(luò)，SD/HD視頻，測(cè)試和測(cè)量，時(shí)鐘和數(shù)據(jù)恢復(fù)，F(xiàn)PGA/ASIC時(shí)鐘生成等領(lǐng)域.
Si530/531 XO利用天空解決方案的先進(jìn)DSPLL®電路提供一個(gè)高頻低抖動(dòng)時(shí)鐘。Si530/531 OSC晶振可提供從10到945MHz的任意速率輸出頻率，并選擇頻率到1400MHz。與傳統(tǒng)的XO不同，每個(gè)輸出頻率都需要一個(gè)不同的晶體，而Si530/531使用一個(gè)固定的晶體來提供一個(gè)大范圍的輸出頻率。這種基于集成電路的方法允許晶體諧振器提供特殊的頻率穩(wěn)定性和可靠性。美國Silicon晶振 531BC125M000DG 6G以太網(wǎng)晶振 Si531差分振蕩器.
美國Silicon晶振 531BC125M000DG 6G以太網(wǎng)晶振 Si531差分振蕩器 參數(shù)表
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |||||||||||||||||
| Supply Voltage1 | V DD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | |||||||||||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | |||||||||||||||||||
| 1.8 V option | 1.71 | 1.8 | 1.89 | V | |||||||||||||||||||
| Supply Current | IDD |
Output enabled LVPECL CML LVDS CMOS |
— — — — |
111 99 90 81 |
121 108 98 88 |
mA | |||||||||||||||||
| Tristate mode | — | 60 | 75 | mA | |||||||||||||||||||
| Output Enable (OE)2 | VIH | 0.75 x V DD | — | — | V | ||||||||||||||||||
| VIL | — | — | 0.5 | V | |||||||||||||||||||
| Operating Temperature Range | TA | –40 | — | 85 | ºC | ||||||||||||||||||
| Table 2. CLK± Output Frequency Characteristics | |||||||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |||||||||||||||||
| Nominal Frequency1,2 | fO | LVPECL/LVDS/CML | 10 | — | 945 | MHz | |||||||||||||||||
| CMOS | 10 | — | 160 | MHz | |||||||||||||||||||
| Initial Accuracy | fi |
Measured at +25 °C at time of shipping |
— | ±1.5 | — | ppm | |||||||||||||||||
| Temperature Stability1,3 |
–7 –20 –50 |
— |
+7 +20 +50 |
ppm | |||||||||||||||||||
| Aging | fa | Frequency drift over first year | — | — | ±3 | ppm | |||||||||||||||||
|
Frequency drift over 20 year life |
— | — | ±10 | ppm | |||||||||||||||||||
| Table 3. CLK± Output Levels and Symmetry | |||||||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |||||||||||||||||
| LVPECL Output Option1 | VO | mid-level | V DD – 1.42 | — | V DD – 1.25 | V | |||||||||||||||||
| VOD | swing (diff) | 1.1 | — | 1.9 | VPP | ||||||||||||||||||
| VSE | swing (single-ended) | 0.55 | — | 0.95 | VPP | ||||||||||||||||||
| LVDS Output Option2 | VO | mid-level | 1.125 | 1.20 | 1.275 | V | |||||||||||||||||
| VOD | swing (diff) | 0.5 | 0.7 | 0.9 | VPP | ||||||||||||||||||
| CML Output Option2 | VO | 2.5/3.3 V option mid-level | V DD – 1.30 | V | |||||||||||||||||||
| 1.8 V option mid-level | V DD – 0.36 | V | |||||||||||||||||||||
| VOD | 2.5/3.3 V option swing (diff) | 1.10 | 1.50 | 1.90 | VPP | ||||||||||||||||||
| 1.8 V option swing (diff) | 0.35 | 0.425 | 0.50 | VPP | |||||||||||||||||||
| CMOS Output Option3 | V OH | I OH= 32 mA | 0.8 x V DD | V DD | V | ||||||||||||||||||
| VOL | I OL= 32 mA | 0.4 | V | ||||||||||||||||||||
| Rise/Fall time (20/80%) | tR,t F | LVPECL/LVDS/CML | 350 | ps | |||||||||||||||||||
| CMOS with CL= 15 pF | 1 | ns | |||||||||||||||||||||
| Symmetry (duty cycle) | SYM |
LVPECL: (diff) LVDS: CMOS: |
V DD – 1.3 V 1.25 V (diff) V DD/2 |
45 | 55 | % | |||||||||||||||||
美國Silicon晶振 531BC125M000DG 6G以太網(wǎng)晶振 Si531差分振蕩器 尺寸圖
進(jìn)口有源晶振產(chǎn)品特性：
可用于任何速率輸出
頻率從10兆赫到945兆赫
并選擇1.4 GHz的頻率
具有卓越性能的第三代DSPLL®
抖動(dòng)性能
頻率穩(wěn)定性比
SAW振蕩器
內(nèi)部固定晶體頻率
確保高可靠性和低成本
可用的CMOS、LVPECL、LVDS和CML輸出
3.3、2.5和1.8 V電源選項(xiàng)
行業(yè)標(biāo)準(zhǔn)5 x 7毫米
包裝和引腳
無鉛/符合RoHS
更多相關(guān)Silicon晶振型號(hào)
| Manufacturer Part Number原廠代碼 | 晶振廠家 | Series型號(hào) | Frequency 頻率 | Voltage - Supply電壓 | Frequency Stability頻率穩(wěn)定度 |
| SI50122-A4-GM | Silicon Labs | SI50122-A4 | 100MHz | 2.25 V ~ 3.63 V | +100ppm |
| 511ABA156M250AAGR | Silicon Labs | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 530FC125M000DG | Silicon Labs | Si530 | 125MHz | 2.5V | ±7ppm |
| 531BC200M000DG | Silicon Labs | Si531 | 200MHz | 3.3V | ±7ppm |
| 531BC250M000DG | Silicon Labs | Si531 | 250MHz | 3.3V | ±7ppm |
| 530AC622M080DG | Silicon Labs | Si530 | 622.08MHz | 3.3V | ±7ppm |
| 511FBA100M000BAG | Silicon Labs | Si511 | 100MHz | 2.5V | ±25ppm |
| 511BBA106M250BAG | Silicon Labs | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 510BBA156M250AAG | Silicon Labs | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 510ABA156M250AAG | Silicon Labs | Si510 | 156.25MHz | 3.3V | ±25ppm |
| 531BC125M000DG | Silicon Labs | Si531 | 125MHz | 3.3V | ±7ppm |
| 530AC125M000DG | Silicon Labs | Si530 | 125MHz | 3.3V | ±7ppm |
| 531FB106M250DG | Silicon Labs | Si531 | 106.25MHz | 2.5V | ±20ppm |
| 531AC156M250DG | Silicon Labs | Si531 | 156.25MHz | 3.3V | ±7ppm |
| 531AC200M000DG | Silicon Labs | Si531 | 200MHz | 3.3V | ±7ppm |
| 531BC148M500DG | Silicon Labs | Si531 | 148.5MHz | 3.3V | ±7ppm |
| 530AC200M000DG | Silicon Labs | Si530 | 200MHz | 3.3V | ±7ppm |
| 530BC200M000DG | Silicon Labs | Si530 | 200MHz | 3.3V | ±7ppm |
| 531BC156M250DG | Silicon Labs | Si531 | 156.25MHz | 3.3V | ±7ppm |
| 530FC200M000DG | Silicon Labs | Si530 | 200MHz | 2.5V | ±7ppm |
| 536BB156M250DG | Silicon Labs | Si536 | 156.25MHz | 3.3V | ±20ppm |
| 536FB156M250DG | Silicon Labs | Si536 | 156.25MHz | 2.5V | ±20ppm |
| 536AB156M250DG | Silicon Labs | Si536 | 156.25MHz | 3.3V | ±20ppm |
| 510FBA125M000BAG | Silicon Labs | Si510 | 125MHz | 2.5V | ±25ppm |
| 511BBA000149BAG | Silicon Labs | Si511 | 74.175824MHz | 3.3V | ±25ppm |
| 510FBA100M000BAG | Silicon Labs | Si510 | 100MHz | 2.5V | ±25ppm |
| 511FBA106M250BAG | Silicon Labs | Si511 | 106.25MHz | 2.5V | ±25ppm |
| 510BBA106M250BAG | Silicon Labs | Si510 | 106.25MHz | 3.3V | ±25ppm |
| 511BBA125M000AAG | Silicon Labs | Si511 | 125MHz | 3.3V | ±25ppm |
| 510BBA100M000AAG | Silicon Labs | Si510 | 100MHz | 3.3V | ±25ppm |
| 510BBA125M000AAG | Silicon Labs | Si510 | 125MHz | 3.3V | ±25ppm |
| 511FBA100M000AAG | Silicon Labs | Si511 | 100MHz | 2.5V | ±25ppm |
| 511BBA106M250AAG | Silicon Labs | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 511FBA148M500BAG | Silicon Labs | Si511 | 148.5MHz | 2.5V | ±25ppm |
| 510FBA148M500BAG | Silicon Labs | Si510 | 148.5MHz | 2.5V | ±25ppm |
| 511BBA156M250BAG | Silicon Labs | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 511FBA156M250BAG | Silicon Labs | Si511 | 156.25MHz | 2.5V | ±25ppm |
| 510BBA148M500BAG | Silicon Labs | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 511BBA156M250AAG | Silicon Labs | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 510FBA156M250AAG | Silicon Labs | Si510 | 156.25MHz | 2.5V | ±25ppm |
| 511ABA155M520AAG | Silicon Labs | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 510FBA148M500AAG | Silicon Labs | Si510 | 148.5MHz | 2.5V | ±25ppm |
| 511BBA155M520AAG | Silicon Labs | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 510BBA148M500AAG | Silicon Labs | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510ABA148M500AAG | Silicon Labs | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510DBA100M000AAG | Silicon Labs | Si510 | 100MHz | 3.3V | ±25ppm |
| 531AC125M000DG | Silicon Labs | Si531 | 125MHz | 3.3V | ±7ppm |
| 531FC125M000DG | Silicon Labs | Si531 | 125MHz | 2.5V | ±7ppm |
| 530AC156M250DG | Silicon晶振 | Si530 | 156.25MHz | 3.3V | ±7ppm |
| 531FC156M250DG | Silicon Labs | Si531 | 156.25MHz | 2.5V | ±7ppm |
| 531FC148M500DG | Silicon Labs | Si531 | 148.5MHz | 2.5V | ±7ppm |
| 531AC155M520DG | Silicon Labs | Si531 | 155.52MHz | 3.3V | ±7ppm |
| 530AC155M520DG | Silicon Labs | Si530 | 155.52MHz | 3.3V | ±7ppm |
| 531BC155M520DG | Silicon Labs | Si531 | 155.52MHz | 3.3V | ±7ppm |
| 531FC200M000DG | Silicon Labs | Si531 | 200MHz | 2.5V | ±7ppm |
| 530BC148M500DG | Silicon Labs | Si530 | 148.5MHz | 3.3V | ±7ppm |
| 536EB156M250DG | Silicon Labs | Si536 | 156.25MHz | 2.5V | ±20ppm |
| 536BB125M000DG | Silicon Labs | Si536 | 125MHz | 3.3V | ±20ppm |
| 531AC622M080DG | Silicon Labs | Si531 | 622.08MHz | 3.3V | ±7ppm |
| 531AC312M500DG | Silicon Labs | Si531 | 312.5MHz | 3.3V | ±7ppm |
| 510ABA000149BAG | Silicon Labs | Si510 | 74.175824MHz | 3.3V | ±25ppm |
| 510BBA000149BAG | Silicon Labs | Si510 | 74.175824MHz | 3.3V | ±25ppm |
深圳市龍湖電子有限公司
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